@article{oai:nitech.repo.nii.ac.jp:00005426,
 author = {Yokota, Takeshi and Murata, S. and Kito, S. and Gomi, M.},
 issue = {7},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Feb},
 note = {We investigated the relationship between the magneto-capacitance-voltage characteristics and the magnetoresistance of a metal (Au)/insulator (Cr2O3/Cr2O3-x/FeCr/CeO2)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the FeCr/CeO2 layer from Si were injected into the Cr2O3-x layer. When a magnetic field was applied, the resistance of this capacitor above the flat-band voltage was reduced, causing the hysteresis window to become large. This result indicates that this capacitor, which contains a magnetic gate insulator, has the potential to be used in multilevel memories by the application of an external magnetic field., application/pdf},
 pages = {07D905-1--07D905-3},
 title = {Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr2O3/Cr2O3-x/ FeCr/CeO2/Si metal-insulator-semiconductor capacitor},
 volume = {105},
 year = {2009}
}