{"created":"2023-05-15T12:36:15.009644+00:00","id":5475,"links":{},"metadata":{"_buckets":{"deposit":"d6b84711-9055-43fb-a200-9acdacc90966"},"_deposit":{"created_by":91,"id":"5475","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5475"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005475","sets":["31"]},"author_link":["8609","3523","19242","8609","3523"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-12-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"1469","bibliographicPageStart":"1464","bibliographicVolumeNumber":"E92-C","bibliographic_titles":[{"bibliographic_title":"IEICE transactions on electronics","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Indium-sulfide-oxide thin films have been successfully deposited on indium-tin-oxide-coated glass from an aqueous solution containing Na2S2O3 and In2(SO4)3  by electrochemical deposition using a periodic 2-step-pulse voltage. The films have been annealed in nitrogen atmosphere for an hour at different temperatures; namely, 100, 200, 300 and 400. Then, the as-deposited and annealed films were characterized structurally, morphologically and optically. X-ray photoelectron spectroscopy (XPS) study was performed in order to understand the chemical states of the oxygen involved in the film composition. The photosensitivity was observed by means of photoelectrochemical measurements, which confirmed that the as-deposited and annealed films showed n-type conduction. Moreover, a heterostructure solar cell that has indium sulfide as a buffer layer and tin sulfide as an absorber was fabricated and characterized.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}],"names":[{"name":"加藤, 正史"}]},{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electronics, Information and Communication Engineers","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8524","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA10826283","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Haleem, Ashraf M. Abdel","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19242","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kato, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-26"}],"displaytype":"detail","filename":"E92-C_1464.pdf","filesize":[{"value":"596.6 kB"}],"format":"application/pdf","license_note":"Copyright(c)2009 IEICE　http://search.ieice.org/index.html","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5475/files/E92-C_1464.pdf"},"version_id":"78140c99-d029-452c-8f35-5f698738689b"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5475","relation_version_is_last":true,"title":["Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-21T04:40:34.253810+00:00"}