{"created":"2023-05-15T12:36:15.257904+00:00","id":5481,"links":{},"metadata":{"_buckets":{"deposit":"7fff4abd-d9fc-47a8-8265-06c4d9432dba"},"_deposit":{"created_by":91,"id":"5481","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5481"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005481","sets":["31"]},"author_link":["8609","19272","19273","19274","19275","8609"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-12-16","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageEnd":"242110-3","bibliographicPageStart":"242110-1","bibliographicVolumeNumber":"95","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation with increasing injection. Recombination lifetime in different samples varied between 0.5-120 ns. Its value decreased with excess carrier density in the transition range between minority-carrier-lifetime and high-injection lifetime but abnormally increased above the carrier density of 2×1017-cm-3. Negligible contribution of surface and Auger recombination to recombination lifetime peculiarities was observed. Possible mechanisms of the observed lifetime variation are discussed.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}],"names":[{"name":"加藤, 正史"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.3273382"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.3273382","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Grivickas, Vytautas","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19272","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Manolis, Georgios","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19273","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gulbinas, Karolis","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19274","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jarasinas, Kstutis","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"19275","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kato, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-26"}],"displaytype":"detail","filename":"APL 95_242110-1.pdf","filesize":[{"value":"293.1 kB"}],"format":"application/pdf","license_note":"Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 95(24),pp.242110-1 - 242110-3 ; 2009 and may be found at http://link.aip.org/link/?apl/95/242110","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5481/files/APL 95_242110-1.pdf"},"version_id":"2739f52e-542b-4300-b2f9-8e1634b4c7e3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Excess carrier recombination lifetime of bulk n-type 3C-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Excess carrier recombination lifetime of bulk n-type 3C-SiC","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5481","relation_version_is_last":true,"title":["Excess carrier recombination lifetime of bulk n-type 3C-SiC"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-21T04:42:07.112219+00:00"}