@article{oai:nitech.repo.nii.ac.jp:00005514,
 author = {Hamaya, Kohei and Murakami, Tatsuhiko and Yamada, Shinya and Mibu, Ko and Miyao, Masanobu},
 issue = {14},
 journal = {Physical Review B},
 month = {Apr},
 note = {For exploring group-IV semiconductor spintronics with ferromagnetic Heusler compounds, we study the local structural ordering of the stoichiometric Fe 3Si and off-stoichiometric Fe 3.2Si 0.8 films epitaxially grown on Ge(111) at a very low temperature of 130 ?C. Analyzing their Fe57 Mossbauer spectra, we can discuss the site occupation of Fe atoms in the films grown directly on a semiconductor substrate, where the influence of the interfacial reactions between Fe 3Si or Fe 3.2Si 0.8 and Ge on the Mossbauer spectra is minimized. As a result, we can quantitatively obtain the local degree of the D0 3 ordering (?67%) for the as-grown stoichiometric films, whereas we can not see the structural ordering for the as-grown off-stoichiometric films. Comparing the analytic data between as-grown and annealed films, we find that the postannealing can act effectively on the improvement of the structural ordering only for the off-stoichiometric films., application/pdf},
 pages = {144411-1--144411-6},
 title = {Local structural ordering in low-temperature-grown epitaxial Fe3+x Si1-x films on Ge(111)},
 volume = {83},
 year = {2011}
}