@article{oai:nitech.repo.nii.ac.jp:00005538,
 author = {Selvaraj, Susai Lawrence and Watanabe, Arata and Egawa, Takashi},
 issue = {25},
 journal = {Applied Physics Letters},
 month = {Jun},
 note = {We have investigated the regions around deep-pits and their limitations on the performance of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si. The device characteristics such as maximum drain current density (IDSmax), threshold voltage (Vth), and three terminal-OFF breakdown (B VOFF) of a HEMT were affected based on the distance of deep-pits from a device active region. The deterioration of HEMT characteristics are significant if the active region is present within 50 μm radius of a deep-pit and becomes insignificant for distance beyond 50 μm. These device characteristics were compared with optical measurements and it was found the region around 50 μm radius of a pit have large dislocations and defects as confirmed by cathodoluminescence. Further, the E 2 Raman shift measurements reveal additional stress in the 50 μm region around a pit., application/pdf},
 pages = {252105-1--252105-3},
 title = {Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate},
 volume = {98},
 year = {2011}
}