{"created":"2023-05-15T12:36:17.654125+00:00","id":5538,"links":{},"metadata":{"_buckets":{"deposit":"82a8daec-d51e-4f9f-a8c9-a568711ac1fe"},"_deposit":{"created_by":3,"id":"5538","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5538"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005538","sets":["31"]},"author_link":["522","19609","19608"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-06-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"25","bibliographicPageEnd":"252105-3","bibliographicPageStart":"252105-1","bibliographicVolumeNumber":"98","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We have investigated the regions around deep-pits and their limitations on the performance of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si. The device characteristics such as maximum drain current density (IDSmax), threshold voltage (Vth), and three terminal-OFF breakdown (B VOFF) of a HEMT were affected based on the distance of deep-pits from a device active region. The deterioration of HEMT characteristics are significant if the active region is present within 50 μm radius of a deep-pit and becomes insignificant for distance beyond 50 μm. These device characteristics were compared with optical measurements and it was found the region around 50 μm radius of a pit have large dislocations and defects as confirmed by cathodoluminescence. Further, the E 2 Raman shift measurements reveal additional stress in the 50 μm region around a pit.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.3602919"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.3602919","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Selvaraj, Susai Lawrence","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watanabe, Arata","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-26"}],"displaytype":"detail","filename":"EgawaTakashi_2011_AIP3.pdf","filesize":[{"value":"995.7 kB"}],"format":"application/pdf","license_note":"Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 98, 252105 ; 2011 and may be found at http://dx.doi.org/10.1063/1.3602919","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5538/files/EgawaTakashi_2011_AIP3.pdf"},"version_id":"cd60925c-dd10-48d6-a676-58098e13ae66"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-03-30"},"publish_date":"2013-03-30","publish_status":"0","recid":"5538","relation_version_is_last":true,"title":["Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:21:06.451084+00:00"}