{"created":"2023-05-15T12:36:18.134705+00:00","id":5549,"links":{},"metadata":{"_buckets":{"deposit":"243da4a4-2c8d-4950-a688-d9c65372ef77"},"_deposit":{"created_by":3,"id":"5549","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5549"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005549","sets":["31"]},"author_link":["522","8678","19658"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"033504-3","bibliographicPageStart":"033504-1","bibliographicVolumeNumber":"99","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Frequency dependent conductance measurements were employed to study the trapping effects of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures (MISHs). Conventional fitting method could not be used to explain the experimental parallel conductance (Gp/ω) results. Alternatively, experimental Gp/ω values were resolved into two fitting curves for gate voltages (-1.2 to -1.8 V) near the threshold voltage (Vth) by a fitting model. In the low frequency region (?50 kHz), the G p/ω values can be fitted into a single curve. On the other hand, in the high frequency region, two fitting curves were necessary. The results using this model explicitly yielded two types of traps existing in the AlN/AlGaN/GaN MISHs, one due to the insulating AlN layer and the other caused by the AlGaN barrier layer.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"久保, 俊晴"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.3614556"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.3614556","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Freedsman, Joseph J.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kubo, Toshiharu","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-26"}],"displaytype":"detail","filename":"KuboToshiharu_2011_AIP.pdf","filesize":[{"value":"738.9 kB"}],"format":"application/pdf","license_note":"Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 99, 033504 ; 2011 and may be found at http://dx.doi.org/10.1063/1.3614556","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5549/files/KuboToshiharu_2011_AIP.pdf"},"version_id":"b0dabdfe-df7e-46bd-ac15-fc35aabe0768"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-03-30"},"publish_date":"2013-03-30","publish_status":"0","recid":"5549","relation_version_is_last":true,"title":["Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:20:45.797198+00:00"}