@article{oai:nitech.repo.nii.ac.jp:00005616,
 author = {Wei, Qiyuan and Li, TiHuang. Yin and MinHuang, Junying and Chen, Zhao and Egawa, Takashi and Ponce, Fernando A},
 issue = {9},
 journal = {Applied Physics Letters},
 month = {Feb},
 note = {The In xAl 1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the In xAl 1-xN layer. The V-grooves coalesce at ?200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. Transmission electron microscopy suggests that the structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves., application/pdf},
 pages = {092101-1--092101-3},
 title = {Compositional instability in InAlN/GaN lattice-matched epitaxy},
 volume = {100},
 year = {2012}
}