{"created":"2023-05-15T12:36:20.942637+00:00","id":5616,"links":{},"metadata":{"_buckets":{"deposit":"7d91f632-80ba-47e3-afa5-f299df04b0dc"},"_deposit":{"created_by":3,"id":"5616","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5616"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005616","sets":["31"]},"author_link":["522","20035","20034","20036","20038","20033"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-02-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"092101-3","bibliographicPageStart":"092101-1","bibliographicVolumeNumber":"100","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The In xAl 1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the In xAl 1-xN layer. The V-grooves coalesce at ?200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. Transmission electron microscopy suggests that the structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.3690890"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.3690890","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wei, Qiyuan","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Li, TiHuang. Yin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"MinHuang, Junying","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Chen, Zhao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ponce, Fernando A","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-26"}],"displaytype":"detail","filename":"EgawaTakashi_2012_AIP.pdf","filesize":[{"value":"979.0 kB"}],"format":"application/pdf","license_note":"Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 100, 092101 ; 2012 and may be found at http://dx.doi.org/10.1063/1.3690890","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5616/files/EgawaTakashi_2012_AIP.pdf"},"version_id":"9ff46840-2ef5-41e9-9640-368201f25b62"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Compositional instability in InAlN/GaN lattice-matched epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Compositional instability in InAlN/GaN lattice-matched epitaxy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-03-30"},"publish_date":"2013-03-30","publish_status":"0","recid":"5616","relation_version_is_last":true,"title":["Compositional instability in InAlN/GaN lattice-matched epitaxy"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:13:58.462967+00:00"}