@article{oai:nitech.repo.nii.ac.jp:00005668,
 author = {Freedsman, Joseph J. and Kubo, Toshiharu and Egawa, Takashi},
 issue = {1},
 journal = {Applied Physics Letters},
 month = {Jul},
 note = {application/pdf},
 pages = {013506-1--013506-4},
 title = {Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers},
 volume = {101},
 year = {2012}
}