{"created":"2023-05-15T12:36:43.436389+00:00","id":6162,"links":{},"metadata":{"_buckets":{"deposit":"401f8d2a-7b96-418c-a463-bc397bcb97f7"},"_deposit":{"created_by":91,"id":"6162","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"6162"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00006162","sets":["31"]},"author_link":["522","22134","22135","22136","522"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-09-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageStart":"103506","bibliographicVolumeNumber":"107","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Egawa, Takashi","nameLang":"en"},{"name":"江川, 孝志","nameLang":"ja"},{"name":"エガワ, タカシ","nameLang":"ja-Kana"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics ","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.4930876"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.4930876","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Freedsman, J.J. ","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22134","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, A.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22135","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Urayama, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"22136","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"},{"creatorName":"江川, 孝志","creatorNameLang":"ja"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-11"}],"displaytype":"detail","filename":"EgawaTakashi_2015_P1.pdf","filesize":[{"value":"826.3 kB"}],"format":"application/pdf","license_note":"Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in  [See also CITATION, DOI] and may be found at https://doi.org/10.1063/1.4930876","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/6162/files/EgawaTakashi_2015_P1.pdf"},"version_id":"e2fdfc9e-6239-4a41-a085-801cbafe79ed"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-01-11"},"publish_date":"2018-01-11","publish_status":"0","recid":"6162","relation_version_is_last":true,"title":["Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-26T05:06:31.095890+00:00"}