{"created":"2023-05-15T12:37:03.969870+00:00","id":6669,"links":{},"metadata":{"_buckets":{"deposit":"f858e2e2-f7b9-472c-bb1b-a0f25885a48a"},"_deposit":{"created_by":3,"id":"6669","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6669"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00006669","sets":["31"]},"author_link":["522","8618","22737","22736"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-04-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"051001","bibliographicVolumeNumber":"11","bibliographic_titles":[{},{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"三好, 実人"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.7567/APEX.11.051001"}],"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/APEX.11.051001","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"18820778","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA12295133","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Miyoshi, Makoto","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Yamanaka, Mizuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Takeuchi, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-02-03"}],"displaytype":"detail","filename":"MiyoshiMakoto_2018_A1.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","license_note":"This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.7567/APEX.11.051001.","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/6669/files/MiyoshiMakoto_2018_A1.pdf"},"version_id":"ffe19281-378e-49d2-afc3-a8edd602e403"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Epitaxial growth and characterization of approximatey 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Epitaxial growth and characterization of approximatey 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-02-03"},"publish_date":"2021-02-03","publish_status":"0","recid":"6669","relation_version_is_last":true,"title":["Epitaxial growth and characterization of approximatey 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T13:10:32.286898+00:00"}