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Improved spectrometric performance of CdTe radiation detectors in a p-i -n design
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Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 75(15), pp.2322-2324; 1999 and may be found at http://link.aip.org/link/?apl/75/2322
CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents, typically 60 pA/mm2, were attained at room temperature (25°C) for an applied reverse bias of 250 V. Detectors exhibited excellent spectral responses with an energy resolution of 1.42, 1.7, and 4.2 keV FWHM at 59.5, 122, and 662 keV γ peaks, respectively.
Improved spectrometric performance of CdTe radiation detectors in a p-i -n design
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