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Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(10), pp.1472-1474; 2000 and may be found at http://link.aip.org/link/?apl/77/1472
Recent studies have shown the application of amorphous carbon as a semiconductor in C/Si heterojunction photovoltaic solar cells. In this letter, we report the rectifying current-voltage characteristics of the phosphorus-doped carbon/undoped-carbon (n-C/p-C) junction. The p- and n-carbon films were deposited by pyrolysis and ion-beam sputtering, respectively, on a p-Si substrate, using camphor as a natural carbon precursor. The preliminary photovoltaic characteristics of the cell reveals a short-circuit current density of 17.1 mA/cm2, open-circuit voltage of 0.339 V, and photoelectrical conversion efficiency of 1.82%, a reproducible result, under air mass zero and 1 sun illumination conditions. The spectral photoresponse characteristics of the cell of the above configuration was explained in terms of transmission/absorption characteristics of the two individual carbon layers.
Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate
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