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Electrical characterization of acceptor levels in Mg-doped GaN
https://nitech.repo.nii.ac.jp/records/5100
https://nitech.repo.nii.ac.jp/records/5100f9829289-26aa-443a-840c-497b9038aac5
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (59.9 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 92(9), pp.5590- 5592 ; 2002 and may be found at http://link.aip.org/link/?jap/92/5590
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Electrical characterization of acceptor levels in Mg-doped GaN | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Nakano, Yoshitaka
× Nakano, Yoshitaka
× Jimbo, Takashi
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| 著者別名 | ||||||||||
| 姓名 | 神保, 孝志 | |||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 92, 号 9, p. 5590-5592, 発行日 2002-11-01 |
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| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1512681 | |||||||||
| 関連名称 | 10.1063/1.1512681 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Thermal admittance and current deep-level transient spectroscopy techniques have been applied to Schottky diodes fabricated on Mg-doped GaN grown by metalorganic chemical vapor deposition to investigate the dependence of the Mg acceptor levels on the annealing temperature. Both measurement techniques revealed two deep acceptor levels with activation energies at ?135 and ?160 meV above the valence band. The former level was only seen when the samples were annealed at temperatures between 650 and 700°C, and its presence corresponds with a significant increase in effective acceptor concentration, as confirmed by capacitance-voltage measurements. Therefore, this acceptor level is considered to dominate the electrical activation of Mg in GaN. | |||||||||
| 言語 | en | |||||||||
