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Effect of carrier for magnetic and magnetotransport properties of Si:Ce films
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 95(11), pp.7679- 7681 ; 2003 and may be found at http://link.aip.org/link/?jap/93/7679
Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ-T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin-glass transition. But the cusp observed in the ρ-T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types.
Effect of carrier for magnetic and magnetotransport properties of Si:Ce films
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