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Effect of carrier for magnetic and magnetotransport properties of Si:Ce films
https://nitech.repo.nii.ac.jp/records/5126
https://nitech.repo.nii.ac.jp/records/5126dbcd54c3-8d0f-43ef-8237-dfb04bd9a7ab
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (45.0 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 95(11), pp.7679- 7681 ; 2003 and may be found at http://link.aip.org/link/?jap/93/7679
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Effect of carrier for magnetic and magnetotransport properties of Si:Ce films | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Yokota, Takeshi
× Yokota, Takeshi
× Fujimura, N.
× Wada, T.
× Hamasaki, S.
× Ito, T.
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| 著者別名 | ||||||||||||||||
| 姓名 | 横田, 壮司 | |||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 93, 号 10, p. 7679-7681, 発行日 2003-03-15 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1556116 | |||||||||||||||
| 関連名称 | 10.1063/1.1556116 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ-T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin-glass transition. But the cusp observed in the ρ-T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types. | |||||||||||||||
| 言語 | en | |||||||||||||||
