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Effect of Be+ + O+ coimplantation on Be acceptors in GaN
https://nitech.repo.nii.ac.jp/records/5131
https://nitech.repo.nii.ac.jp/records/51315618ad29-492e-466c-91f4-1467da862465
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (63.0 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(13),pp.2082-2084; 2003 and may be found at http://link.aip.org/link/?apl/82/2082
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Effect of Be+ + O+ coimplantation on Be acceptors in GaN | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Nakano, Yoshitaka
× Nakano, Yoshitaka
× Kachi, Tetsu
× Jimbo, Takashi
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| 著者別名 | ||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 82, 号 13, p. 2082-2084, 発行日 2003-03-31 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543432 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| item_10001_relation_34 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1564641 | |||||||||||
| 関連名称 | 10.1063/1.1564641 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | P-type regions were produced in undoped GaN films by Be+ and Be++O+ implantation and subsequent annealing at temperatures between 1000 and 1050°C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was found to decrease from ?240 to ?163 meV by the implantation of additional O atoms, which is in reasonable agreement with the improvement in p-type doping characteristics determined by room-temperature Hall-effect measurements. These results indicate that Be++O+ coimplantation reduces the depth of the Be acceptor level based on a site-competition effect. Therefore, these acceptor levels are most probably attributable to Be atoms at interstitial and Ga-lattice sites. | |||||||||||
| 言語 | en | |||||||||||
