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Effect of Be+ + O+ coimplantation on Be acceptors in GaN
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(13),pp.2082-2084; 2003 and may be found at http://link.aip.org/link/?apl/82/2082
P-type regions were produced in undoped GaN films by Be+ and Be++O+ implantation and subsequent annealing at temperatures between 1000 and 1050°C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was found to decrease from ?240 to ?163 meV by the implantation of additional O atoms, which is in reasonable agreement with the improvement in p-type doping characteristics determined by room-temperature Hall-effect measurements. These results indicate that Be++O+ coimplantation reduces the depth of the Be acceptor level based on a site-competition effect. Therefore, these acceptor levels are most probably attributable to Be atoms at interstitial and Ga-lattice sites.
Effect of Be+ + O+ coimplantation on Be acceptors in GaN
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