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Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr2O3/Cr2O3-x/ FeCr/CeO2/Si metal-insulator-semiconductor capacitor
https://nitech.repo.nii.ac.jp/records/5426
https://nitech.repo.nii.ac.jp/records/54262be1e9dc-61b8-49b8-b011-9e3d06c621c7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (314.5 kB)
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Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 105(7), pp.07D905-1- 07D905-3 ; 2009 and may be found at http://link.aip.org/link/?jap/105/07D905
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr2O3/Cr2O3-x/ FeCr/CeO2/Si metal-insulator-semiconductor capacitor | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Yokota, Takeshi
× Yokota, Takeshi
× Murata, S.
× Kito, S.
× Gomi, M.
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| 著者別名 | ||||||||||||||
| 姓名 | 横田, 壮司 | |||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 105, 号 7, p. 07D905-1-07D905-3, 発行日 2009-02-04 |
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| 出版者 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| item_10001_relation_34 | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.3059406 | |||||||||||||
| 関連名称 | 10.1063/1.3059406 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | We investigated the relationship between the magneto-capacitance-voltage characteristics and the magnetoresistance of a metal (Au)/insulator (Cr2O3/Cr2O3-x/FeCr/CeO2)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the FeCr/CeO2 layer from Si were injected into the Cr2O3-x layer. When a magnetic field was applied, the resistance of this capacitor above the flat-band voltage was reduced, causing the hysteresis window to become large. This result indicates that this capacitor, which contains a magnetic gate insulator, has the potential to be used in multilevel memories by the application of an external magnetic field. | |||||||||||||
| 言語 | en | |||||||||||||
