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Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr2O3/Cr2O3-x/ FeCr/CeO2/Si metal-insulator-semiconductor capacitor
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Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 105(7), pp.07D905-1- 07D905-3 ; 2009 and may be found at http://link.aip.org/link/?jap/105/07D905
We investigated the relationship between the magneto-capacitance-voltage characteristics and the magnetoresistance of a metal (Au)/insulator (Cr2O3/Cr2O3-x/FeCr/CeO2)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the FeCr/CeO2 layer from Si were injected into the Cr2O3-x layer. When a magnetic field was applied, the resistance of this capacitor above the flat-band voltage was reduced, causing the hysteresis window to become large. This result indicates that this capacitor, which contains a magnetic gate insulator, has the potential to be used in multilevel memories by the application of an external magnetic field.
Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr2O3/Cr2O3-x/ FeCr/CeO2/Si metal-insulator-semiconductor capacitor
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