WEKO3
アイテム
{"_buckets": {"deposit": "1cec112d-91b4-44d2-9e1d-1d3d3d6e73ee"}, "_deposit": {"created_by": 3, "id": "1590", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "1590"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00001590", "sets": ["332"]}, "author_link": ["4351", "4352", "4350"], "item_9_biblio_info_5": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-03", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "65", "bibliographicPageStart": "1", "bibliographicVolumeNumber": "10", "bibliographic_titles": [{"bibliographic_title": "極微デバイス機能システム研究センター報告書 = Technical report at Research Center for Nano-Device and System"}]}]}, "item_9_description_11": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_9_full_name_4": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "4351", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "名古屋工業大学, 極微デバイス機能システム研究センター"}]}, {"nameIdentifiers": [{"nameIdentifier": "4352", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "ナゴヤコウギョウダイ, ガクゴクビデバイスキノウシステムケンキュウセンター"}]}]}, "item_9_publisher_6": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "名古屋工業大学極微デバイス機能システム研究センター"}]}, "item_9_source_id_8": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA12036883", "subitem_source_identifier_type": "NCID"}]}, "item_9_version_type_9": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Research, Center for Nano-Device and System Nagoya Institute of Technology", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4350", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-12-06"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "trnit2013_1.pdf", "filesize": [{"value": "3.2 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3200000.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/1590/files/trnit2013_1.pdf"}, "version_id": "b5182cdb-c3e6-4a92-8ba2-477b2b31fd13"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Investigation of MIS-type GaN-based HEMT grown by MOCVD on Silicon(111) Substrate", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Investigation of MIS-type GaN-based HEMT grown by MOCVD on Silicon(111) Substrate", "subitem_title_language": "en"}]}, "item_type_id": "9", "owner": "3", "path": ["332"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/1590", "pubdate": {"attribute_name": "公開日", "attribute_value": "2014-01-09"}, "publish_date": "2014-01-09", "publish_status": "0", "recid": "1590", "relation": {}, "relation_version_is_last": true, "title": ["Investigation of MIS-type GaN-based HEMT grown by MOCVD on Silicon(111) Substrate"], "weko_shared_id": -1}
Investigation of MIS-type GaN-based HEMT grown by MOCVD on Silicon(111) Substrate
https://nitech.repo.nii.ac.jp/records/1590
https://nitech.repo.nii.ac.jp/records/1590f19a5012-7ad5-4b1a-a22f-b6af7ebabddf
名前 / ファイル | ライセンス | アクション |
---|---|---|
本文_fulltext (3.2 MB)
|
|
Item type | 紀要論文 / Departmental Bulletin Paper_04(1) | |||||||
---|---|---|---|---|---|---|---|---|
公開日 | 2014-01-09 | |||||||
タイトル | ||||||||
言語 | en | |||||||
タイトル | Investigation of MIS-type GaN-based HEMT grown by MOCVD on Silicon(111) Substrate | |||||||
言語 | ||||||||
言語 | eng | |||||||
資源タイプ | ||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
資源タイプ | departmental bulletin paper | |||||||
著者 |
Research, Center for Nano-Device and System Nagoya Institute of Technology
× Research, Center for Nano-Device and System Nagoya Institute of Technology
WEKO
4350
|
|||||||
著者別名 | ||||||||
姓名 | 名古屋工業大学, 極微デバイス機能システム研究センター | |||||||
著者別名 | ||||||||
姓名 | ナゴヤコウギョウダイ, ガクゴクビデバイスキノウシステムケンキュウセンター | |||||||
書誌情報 |
極微デバイス機能システム研究センター報告書 = Technical report at Research Center for Nano-Device and System 巻 10, p. 1-65, 発行日 2013-03 |
|||||||
出版者 | ||||||||
出版者 | 名古屋工業大学極微デバイス機能システム研究センター | |||||||
書誌レコードID | ||||||||
収録物識別子タイプ | NCID | |||||||
収録物識別子 | AA12036883 | |||||||
著者版フラグ | ||||||||
出版タイプ | VoR | |||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||
フォーマット | ||||||||
内容記述タイプ | Other | |||||||
内容記述 | application/pdf |