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Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition
https://nitech.repo.nii.ac.jp/records/4174
https://nitech.repo.nii.ac.jp/records/41747a346b84-63a6-44de-b22f-c4db76531526
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (547.6 kB)
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Copyright (c) 1992 IEICE http://search.ieice.org/index.html
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Moriguchi, Yukihisa
× Usami, Akira
× Wada, Takao
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : IEICE transactions on communications 巻 E75-C, 号 9, p. 1056-1062, 発行日 1992-09-20 |
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| 出版者 | ||||||||||||||
| 出版者 | Institute of Electronics, Information and Communication Engineers | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0916-8516 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA10826261 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 ?m. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample. | |||||||||||||
| 言語 | en | |||||||||||||
