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Stabilization of Li acceptors in ZnSe by above-band-gap photoirradiation
https://nitech.repo.nii.ac.jp/records/4220
https://nitech.repo.nii.ac.jp/records/4220041fdab1-2b80-4c29-bddb-cb2678213bb0
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (450.1 kB)
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Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 73(11), pp.7225- 7228 ; 1993 and may be found at http://link.aip.org/link/?jap/73/7225
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Stabilization of Li acceptors in ZnSe by above-band-gap photoirradiation | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Wada, Takao
× Fujita, Shizuo
× Fujita, Shigeo
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 73, 号 11, p. 7225-7228, 発行日 1993-06-01 |
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| 出版者 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| item_10001_relation_34 | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.354034 | |||||||||||||
| 関連名称 | 10.1063/1.354034 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | We predict by theoretical calculation that the concentration of interstitial Li (Liint) in ZnSe can be decreased, i.e., the Li acceptor (LiZn) can be stabilized by above‐band‐gap photoirradiation. Creation of excess electrons by the irradiation increases the occupation probability of the Liint donor level and thus the concentration of neutral Liint (Liint0). Consequently, the LiZn concentration increases because of the reaction Liint0+VZn0→LiZn0, where VZn0 and LiZn0 are a neutral Zn vacancy and a neutral Li acceptor, respectively. The carrier injection through an electrical junction will have similar effects as the photoirradiation, and thus our results indicate that the Li acceptors tend to be stable in active regions of light‐emitting diodes and laser diodes. | |||||||||||||
| 言語 | en | |||||||||||||
