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Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy
https://nitech.repo.nii.ac.jp/records/4287
https://nitech.repo.nii.ac.jp/records/4287361aecaf-3ce4-4d26-a539-a94036e353dd
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (337.2 kB)
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Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 75(12), pp.7866- 7868 ; 1994 and may be found at http://link.aip.org/link/?jap/75/7866
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Usami, Akira
× Usami, Akira
× Ichimura, Masaya
× Wada, Takao
× Ishigami, Shun-ichiro
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 75, 号 12, p. 7866-7868, 発行日 1994-06-15 |
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| 出版者 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| item_10001_relation_34 | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.356570 | |||||||||||||
| 関連名称 | 10.1063/1.356570 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | Crystalline quality in a void region of a bonded silicon‐on‐insulator (SOI) wafer is evaluated by micro‐Raman spectroscopy. Downshifting and broadening of the Si optical‐phonon peak are observed at the edge of the void, while spectra within the void are little different from those outside the void. Comparison with calculated results based on the theory of the phonon localization shows that both the shift and the broadening are mainly due to structural disorder and not strain. Electrical properties in a void region are also evaluated by a laser‐microwave method. The lifetime of excess carriers has its minimum value at the void edge. Those results consistently show that the SOI layer is deformed plastically rather than elastically at the boundary of the void. | |||||||||||||
| 言語 | en | |||||||||||||
