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Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method
https://nitech.repo.nii.ac.jp/records/4375
https://nitech.repo.nii.ac.jp/records/4375d76bc1c6-9040-427f-802d-3026bf831c62
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (53.9 kB)
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Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 67(14),pp.2052-2053 ; 1995 and may be found at http://link.aip.org/link/?apl/67/2052
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Eryu, Osamu
× Eryu, Osamu
× Okuyama, Yasuo
× Nakashima, Kenshiro
× Nakata, Toshitake
× Watanabe, Masanori
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| 著者別名 | ||||||||||||||||
| 姓名 | 江龍, 修 | |||||||||||||||
| bibliographic_information |
en : APPLIED PHYSICS LETTERS 巻 67, 号 14, p. 2052-2053, 発行日 1995-10-02 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00543431 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | A p‐n junction has been formed in n‐type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half‐maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p‐n junction clearly showed the rectifying property with low leakage current. | |||||||||||||||
| 言語 | en | |||||||||||||||
