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Slow photoconductivity decay in 3C-SiC on Si substrates
https://nitech.repo.nii.ac.jp/records/4591
https://nitech.repo.nii.ac.jp/records/4591cee1e289-ba8a-4235-a7a3-f3c50346937f
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (112.5 kB)
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Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 84(5) ,pp.2727- 2731 ; 1998 and may be found at http://link.aip.org/link/?jap/84/2727
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Slow photoconductivity decay in 3C-SiC on Si substrates | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Yamada, Noboru
× Tajiri, Hirotaka
× Arai, Eisuke
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 84, 号 5, p. 2727-2731, 発行日 1998-09-01 |
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| 出版者 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | N-type 3C-SiC layers grown on p-type (001) Si substrates were characterized by the conventional photoconductivity decay method. A N2 laser (337 nm wavelength) was used as the excitation source. A very slow component with a time constant larger than 1 ms was observed in the photoconductivity decay curves. A numerical simulation considering a trap with a very small capture cross section for electrons (<1×10-21 cm2) was able to reproduce main qualitative features of the experimental results. From comparison of the experimental decay curves with the theoretical ones, the following conclusions were drawn about the trap in 3C-SiC. (1) The trap level Et is close to the conduction band edge Ec(Ec-Et = 0.1-0.15eV). (2) The concentration is considered to decrease with increasing donor concentration. | |||||||||||||
| 言語 | en | |||||||||||||
