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Structural and optical characterization of CdS films grown by photochemical deposition
https://nitech.repo.nii.ac.jp/records/4700
https://nitech.repo.nii.ac.jp/records/4700dc997323-ad55-4f18-9e04-16ba63d69522
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (263.0 kB)
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Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 85(10),pp.7411-7417; 1999 and may be found at http://link.aip.org/link/?jap/85/7411
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Structural and optical characterization of CdS films grown by photochemical deposition | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Goto, Fumitaka
× Arai, Eisuke
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| 著者別名 | ||||||||||||
| 姓名 | 市村, 正也 | |||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 85, 号 10, p. 7411-7417, 発行日 1999-05-15 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00693547 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | CdS thin films are grown by photochemical deposition from an aqueous solution and characterized by x-ray diffraction (XRD), Raman spectroscopy, photoluminescence measurement, and optical transmission spectroscopy. The films are deposited at room temperature and annealed at temperatures up to 500°C. The as-deposited film is dominantly zinc blende cubic. The cubic phase remains dominant until the annealing temperature becomes higher than 400°C. By the annealing at 450°C, the XRD pattern turns to that of hexagonal phase. Moreover, its peak width decreases and the near-band-edge luminescence begins to be observed. The band gap is decreased by annealing below 400°C and then abruptly increased by the annealing at 450°C. This annealing behavior of the band gap is interpreted considering the quantum size effects, the band tail due to disorder, and the cubic-hexagonal transition. | |||||||||||
| 言語 | en | |||||||||||
