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Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field
https://nitech.repo.nii.ac.jp/records/5063
https://nitech.repo.nii.ac.jp/records/5063ca054e7c-08f6-499a-be9b-cf1410f66d1d
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (52.9 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 80(23),pp.4390-4392 ; 2002 and may be found at http://link.aip.org/link/?apl/80/4390
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Tada, Atsushi
× Arai, Eisuke
× Takamatsu, Hiroyuki
× Sumie, Shingo
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| 著者別名 | ||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 80, 号 23, p. 4390-4392, 発行日 2002-06-10 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00543431 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1483114 | |||||||||||||||
| 関連名称 | 10.1063/1.1483114 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflectance photoconductivity decay (PCD) method. Voltage was applied between an external electrode and a Si wafer to suppress surface recombination. Before the measurement, the surface state density was reduced by a chemical treatment using NH4OH-H2O2-H2O and diluted HF solutions. Carrier lifetime as long as 1 ms was measured by the present method for a wafer with a bare surface. Comparison with results for oxidized wafers show that the present method can suppress surface recombination more effectively than thermal oxidation, which has been often used for surface passivation in PCD measurements. | |||||||||||||||
| 言語 | en | |||||||||||||||
