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GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding
https://nitech.repo.nii.ac.jp/records/5145
https://nitech.repo.nii.ac.jp/records/5145e2c2616e-6fad-42aa-b66e-3d5340dadde2
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (190.4 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(22), pp.3892-3894; 2003 and may be found at http://link.aip.org/link/?apl/82/3892
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
Chandrasekaran, N.
× Chandrasekaran, N.
× 曾我, 哲夫
× Jimbo, Takashi
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| 著者別名 | ||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||
| 言語 | ja | |||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||
| 著者別名 | ||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||
| bibliographic_information |
en : APPLIED PHYSICS LETTERS 巻 82, 号 22, p. 3892-3894, 発行日 2003-06-02 |
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| 出版者 | ||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00543432 | |||||||||||||||||
| 出版タイプ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1581976 | |||||||||||||||||
| 関連名称 | 10.1063/1.1581976 | |||||||||||||||||
| 内容記述 | ||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||
| 内容記述 | A process to transplant GaAs film from a Ge substrate to Si substrate using a direct bonding method is proposed. The scanning electron microscopy picture shows that the GaAs film is uniformly transplanted from Ge to Si. The high-resolution transmission electron microscopy image shows that GaAs is connected to Si by the covalent bonds. The stress of the bonded GaAs on Si is compared with GaAs/GaAs and heteroepitaxially grown GaAs/Ge(before bonding) by a 4.2 K photoluminescence method. The difference in the residual stress between the bonded GaAs/Si sample and GaAs/Si grown by two-step growth is explained by a thermal stress relaxation mechanism during the cooling process. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
