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Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field
https://nitech.repo.nii.ac.jp/records/5160
https://nitech.repo.nii.ac.jp/records/516053b569d8-7041-4d1a-9cbf-616c649e0edb
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (344.6 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 83(6),pp.1068-1070; 2003 and may be found at http://link.aip.org/link/?apl/83/1068
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Takahashi, Hiroshi
× Takahashi, Hiroshi
× Quema, Alex
× Yoshioka, Ryoichiro
× Ono, Shingo
× Sarukura, Nobuhiko
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| 著者別名 | ||||||||||||||||
| 姓名 | 小野, 晋吾 | |||||||||||||||
| bibliographic_information |
en : APPLIED PHYSICS LETTERS 巻 83, 号 6, p. 1068-1070, 発行日 2003-08-11 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00543432 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1600842 | |||||||||||||||
| 関連名称 | 10.1063/1.1600842 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is investigated. At low excitation fluence, an enhancement of the THz-radiation power is observed independent of the magnetic-field direction. As the excitation fluence is increased, a crossover of the terahertz radiation mechanism is observed. At excitation fluence above this crossover, the radiation power is either enhanced or reduced depending on the magnetic-field direction. These results are explained by considering the different THz-radiation mechanisms from the InAs surface with or without photoexcited carrier screening. | |||||||||||||||
| 言語 | en | |||||||||||||||
