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Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy
https://nitech.repo.nii.ac.jp/records/5161
https://nitech.repo.nii.ac.jp/records/51619d97b43f-2f5e-4338-bb70-5bcec1584477
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (97.5 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 94(5), pp.3233- 3238 ; 2003 and may be found at http://link.aip.org/link/?jap/94/3233
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
Kato, Masashi
× Kato, Masashi
× Ichimura, Masaya
× Nakakura, Y.
× Arai, E.
× Tokuda, Y.
× Nishino, S.
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| 著者別名 | ||||||||||||||||||
| 姓名 | 加藤, 正史 | |||||||||||||||||
| 著者別名 | ||||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 94, 号 5, p. 3233-3238, 発行日 2003-09-01 |
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| 出版者 | ||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||
| 出版タイプ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1600528 | |||||||||||||||||
| 関連名称 | 10.1063/1.1600528 | |||||||||||||||||
| 内容記述 | ||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||
| 内容記述 | An optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three peaks were observed, and two of them were identified as E2 and R centers which have been previously reported. We measured the optical cross section for both the centers. By fitting the experimental data with theoretical curves for the optical cross section, we obtained optical ionization energy of 1.58 eV for the R center and 1.0 eV for the E2 center. From the DLTS measurements, the thermal activation energy of the R center is 1.30 eV and that of the E2 center is 0.43 eV. From these results and the previously reported capture energy barrier, the Franck?Condon shift, dFC is estimated to be 0.28 eV for the R center and 0.62 eV for the E2 center. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
