WEKO3
アイテム
Characterization of plasma etching damage on p -type GaN using Schottky diodes
https://nitech.repo.nii.ac.jp/records/5387
https://nitech.repo.nii.ac.jp/records/53877b6c2a3a-9bc7-4c15-b7b5-faf92eee1de1
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (119.1 kB)
|
Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 103(9), pp.093701-1- 093701-5 ; 2008 and may be found at http://link.aip.org/link/?jap/103/093701
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Characterization of plasma etching damage on p -type GaN using Schottky diodes | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
Kato, Masashi
× Kato, Masashi
× Mikamo, K.
× Ichimura, Masaya
× Kanechika, M.
× Ishiguro, O.
× Kachi, T.
|
|||||||||||||||||
| 著者別名 | ||||||||||||||||||
| 姓名 | 加藤, 正史 | |||||||||||||||||
| 著者別名 | ||||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 103, 号 9, p. 093701-1-093701-5, 発行日 2008-05-01 |
|||||||||||||||||
| 出版者 | ||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||
| 出版タイプ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.2908227 | |||||||||||||||||
| 関連名称 | 10.1063/1.2908227 | |||||||||||||||||
| 内容記述 | ||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||
| 内容記述 | The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25?eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
