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Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application
https://nitech.repo.nii.ac.jp/records/5475
https://nitech.repo.nii.ac.jp/records/547528667b02-3ba4-4cd7-a51f-06c901acef20
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (596.6 kB)
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Copyright(c)2009 IEICE http://search.ieice.org/index.html
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Haleem, Ashraf M. Abdel
× Haleem, Ashraf M. Abdel
× Kato, Masashi
× Ichimura, Masaya
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| 著者別名 | ||||||||||||
| 姓名 | 加藤, 正史 | |||||||||||
| 著者別名 | ||||||||||||
| 姓名 | 市村, 正也 | |||||||||||
| 書誌情報 |
en : IEICE transactions on electronics 巻 E92-C, 号 12, p. 1464-1469, 発行日 2009-12-01 |
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| 出版者 | ||||||||||||
| 出版者 | Institute of Electronics, Information and Communication Engineers | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0916-8524 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA10826283 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Indium-sulfide-oxide thin films have been successfully deposited on indium-tin-oxide-coated glass from an aqueous solution containing Na2S2O3 and In2(SO4)3 by electrochemical deposition using a periodic 2-step-pulse voltage. The films have been annealed in nitrogen atmosphere for an hour at different temperatures; namely, 100, 200, 300 and 400. Then, the as-deposited and annealed films were characterized structurally, morphologically and optically. X-ray photoelectron spectroscopy (XPS) study was performed in order to understand the chemical states of the oxygen involved in the film composition. The photosensitivity was observed by means of photoelectrochemical measurements, which confirmed that the as-deposited and annealed films showed n-type conduction. Moreover, a heterostructure solar cell that has indium sulfide as a buffer layer and tin sulfide as an absorber was fabricated and characterized. | |||||||||||
| 言語 | en | |||||||||||
