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Excess carrier recombination lifetime of bulk n-type 3C-SiC
https://nitech.repo.nii.ac.jp/records/5481
https://nitech.repo.nii.ac.jp/records/5481eddc33d3-08a9-4f8f-874b-41c3df5c8581
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (293.1 kB)
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Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 95(24),pp.242110-1 - 242110-3 ; 2009 and may be found at http://link.aip.org/link/?apl/95/242110
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Excess carrier recombination lifetime of bulk n-type 3C-SiC | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Grivickas, Vytautas
× Grivickas, Vytautas
× Manolis, Georgios
× Gulbinas, Karolis
× Jarasinas, Kstutis
× Kato, Masashi
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| 著者別名 | ||||||||||||||||
| 姓名 | 加藤, 正史 | |||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 95, 号 24, p. 242110-1-242110-3, 発行日 2009-12-16 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00543431 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.3273382 | |||||||||||||||
| 関連名称 | 10.1063/1.3273382 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation with increasing injection. Recombination lifetime in different samples varied between 0.5-120 ns. Its value decreased with excess carrier density in the transition range between minority-carrier-lifetime and high-injection lifetime but abnormally increased above the carrier density of 2×1017-cm-3. Negligible contribution of surface and Auger recombination to recombination lifetime peculiarities was observed. Possible mechanisms of the observed lifetime variation are discussed. | |||||||||||||||
| 言語 | en | |||||||||||||||
