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Conventional fitting method could not be used to explain the experimental parallel conductance (Gp/ω) results. Alternatively, experimental Gp/ω values were resolved into two fitting curves for gate voltages (-1.2 to -1.8 V) near the threshold voltage (Vth) by a fitting model. In the low frequency region (?50 kHz), the G p/ω values can be fitted into a single curve. On the other hand, in the high frequency region, two fitting curves were necessary. 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Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique
https://nitech.repo.nii.ac.jp/records/5549
https://nitech.repo.nii.ac.jp/records/5549828cc0ba-1560-4db0-b232-d8192118fc88
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (738.9 kB)
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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 99, 033504 ; 2011 and may be found at http://dx.doi.org/10.1063/1.3614556
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-03-30 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Freedsman, Joseph J.
× Freedsman, Joseph J.× Kubo, Toshiharu× Egawa, Takashi |
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著者別名 | ||||||
姓名 | 久保, 俊晴 | |||||
著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
書誌情報 |
Applied Physics Letters 巻 99, 号 3, p. 033504-1-033504-3, 発行日 2011-07-18 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.3614556 | |||||
関連名称 | 10.1063/1.3614556 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Frequency dependent conductance measurements were employed to study the trapping effects of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures (MISHs). Conventional fitting method could not be used to explain the experimental parallel conductance (Gp/ω) results. Alternatively, experimental Gp/ω values were resolved into two fitting curves for gate voltages (-1.2 to -1.8 V) near the threshold voltage (Vth) by a fitting model. In the low frequency region (?50 kHz), the G p/ω values can be fitted into a single curve. On the other hand, in the high frequency region, two fitting curves were necessary. The results using this model explicitly yielded two types of traps existing in the AlN/AlGaN/GaN MISHs, one due to the insulating AlN layer and the other caused by the AlGaN barrier layer. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |