WEKO3
アイテム
原子レベルでのセラミックスの工学
https://nitech.repo.nii.ac.jp/records/2325
https://nitech.repo.nii.ac.jp/records/23258c11bf1f-7c6e-4294-a37c-b926c7c4d171
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (4.6 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper_04(1) | |||||||
|---|---|---|---|---|---|---|---|---|
| 公開日 | 2011-07-06 | |||||||
| タイトル | ||||||||
| タイトル | 原子レベルでのセラミックスの工学 | |||||||
| 言語 | ja | |||||||
| タイトル | ||||||||
| タイトル | ゲンシ レベル デノ セラミックス ノ コウガク | |||||||
| 言語 | ja-Kana | |||||||
| タイトル | ||||||||
| タイトル | Ceramic Processing on atomic level | |||||||
| 言語 | en | |||||||
| 言語 | ||||||||
| 言語 | jpn | |||||||
| 資源タイプ | ||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
| 資源タイプ | departmental bulletin paper | |||||||
| 著者 |
ブンダリッヒ, ビルフリド
× ブンダリッヒ, ビルフリド
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| 書誌情報 |
ja : セラミックス基盤工学研究センター年報 en : Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology 巻 1, p. 3-12, 発行日 2002-03-31 |
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| 出版者 | ||||||||
| 出版者 | 名古屋工業大学セラミックス基盤工学研究センター | |||||||
| 言語 | ja | |||||||
| ISSN | ||||||||
| 収録物識別子タイプ | PISSN | |||||||
| 収録物識別子 | 1347-1694 | |||||||
| 書誌レコードID | ||||||||
| 収録物識別子タイプ | NCID | |||||||
| 収録物識別子 | AA11625130 | |||||||
| 著者版フラグ | ||||||||
| 出版タイプ | VoR | |||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||
| 内容記述 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | Modern ceramic processing in our century concerns with nano-scale dimensions. Until now, the integration of ceramics into semi-conductor or metallic devices has been mainly considered for the thin film deposition on a substrate. Three examples are shown: TEM-observation of Alumina-Iron and Alumina- Chrome interfaces, of buffer layers between Magnesia and Aluminum nitride and simulation of the Barium- /Strontium-Titanite interface. These epitaxial interfaces have indeed high strength due to an ordered arrangement of atomic bonds, but the mismatch between both crystalline lattices leads to the formation of misfit dislocations. They can leave the interface and destroy the good electric properties of the thin film. Buffer layers can avoid misfit dislocations at the interface. Three types can be classified, buffer layers reducing the misfit, the stress or the dislocation migration. The trend of recent development, however, proceeds towards new processing methods, like the deposition of nano-particles or the wet chemical hydrolysis reaction. At these methods solid-gaseous or solid-liquid interfaces the reaction kinetics and the mobility of the interface are becoming more important parameters. The variety of engineering possibilities increases. Additional to segregation, and mono-layer deposition, now polarization, adhesion, surface coating of particles with inorganic molecules or polymers are available. In all cases the chemical bonding at the interface affects these parameters and their understanding is essential. This overview article summarizes research results of different laboratories and shows the main principles of ceramics processing on atomic scale. |
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| 言語 | en | |||||||
| 見出し | ||||||||
| 大見出し | <総説> | |||||||
| 言語 | ja | |||||||
| 見出し | ||||||||
| 大見出し | <Review paper> | |||||||
| 言語 | en | |||||||
