Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition

APL 56_1433

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APL 56_1433.pdf

https://nitech.repo.nii.ac.jp/record/4035/files/APL 56_1433.pdf

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APL 56_1433.pdf (366.6 kB) sha256 4abc514ea62411daafc2887c77e9867736b23d2aae51dc3fc68c4b81846d0998	Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 56(15), pp.1433-1435; 1990 and may be found at http://link.aip.org/link/?apl/56/1433

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