Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganlc chemical vapor deposition

JAP 67_6908

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JAP 67_6908.pdf

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JAP 67_6908.pdf (684.8 kB) sha256 40b65bf0acc6b2e76c5893b6c4de9961c711835bd188573015614ff3c0b33632	Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 67(11), pp.6908- 6913 ; 1990 and may be found at http://link.aip.org/link/?jap/67/6908

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