Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition

APL 58_1170

WEKO3

lat lon distance

[[sub_check.contents]]

[[sub_radio.contents]]

Field does not validate

[[sub_attr.contents]]　

APL 58_1170.pdf

https://nitech.repo.nii.ac.jp/record/4079/files/APL 58_1170.pdf

本文_fulltext

application/pdf

ファイル	ライセンス
APL 58_1170.pdf (422.6 kB) sha256 91e5ccc6dd963fec86303c8ff0991b3820020d4d08535523da95953b16fa8201	Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 58(11), pp.1170-1172; 1991 and may be found at http://link.aip.org/link/?apl/58/1170

Version	Date Modified	Object File Name	File Size	File Hash Value	Contributor Name	Show/Hide

Downloads

Plays