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Calculation of point defect concentrations in GaAs grown by molecular beam epitaxy
https://nitech.repo.nii.ac.jp/records/4165
https://nitech.repo.nii.ac.jp/records/4165f8ff440e-22dc-4910-b0d8-9340f52d08c7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (372.5 kB)
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Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 72(3), pp.1200- 1202 ; 1992 and may be found at http://link.aip.org/link/?jap/72/1200
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Calculation of point defect concentrations in GaAs grown by molecular beam epitaxy | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Wada, Takao
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| 著者別名 | ||||||||||
| 姓名 | 市村, 正也 | |||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 72, 号 3, p. 1200-1202, 発行日 1992-08-01 |
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| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.351806 | |||||||||
| 関連名称 | 10.1063/1.351806 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Thermodynamic chemistry of native defects is applied to molecular beam epitaxial (MBE) growth of GaAs. Following the model of Stringfellow [J. Cryst. Growth 70, 133 (1984)], we assume that the equilibrium is established at the solid‐vapor interface. Calculated results show that the defect concentration is rather low, less than 1015 cm-3 under usual growth conditions and that MBE GaAs is less As‐rich than those grown by organometallic vapor phase epitaxy or halogen transport vapor phase epitaxy. | |||||||||
| 言語 | en | |||||||||
