Calculation of point defect concentrations in GaAs grown by molecular beam epitaxy

JAP 72_1200

WEKO3

lat lon distance

[[sub_check.contents]]

[[sub_radio.contents]]

Field does not validate

[[sub_attr.contents]]　

JAP 72_1200.pdf

https://nitech.repo.nii.ac.jp/record/4165/files/JAP 72_1200.pdf

本文_fulltext

application/pdf

ファイル	ライセンス
JAP 72_1200.pdf (372.5 kB) sha256 df89aff2743d1da2e8b459e84811d964156a086a2e686166ebdba9d7fb55406c	Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 72(3), pp.1200- 1202 ; 1992 and may be found at http://link.aip.org/link/?jap/72/1200

Version	Date Modified	Object File Name	File Size	File Hash Value	Contributor Name	Show/Hide

Downloads

Plays