Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy

JAP 72_2531

WEKO3

lat lon distance

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JAP 72_2531.pdf

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JAP 72_2531.pdf (341.6 kB) sha256 2f907832c50f38c2b96a5a784fe68d360584075fae4320eda003ab0561ca1ba3	Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 72(6), pp.2531- 2533 ; 1992and may be found at http://link.aip.org/link/?jap/72/2531

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