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Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy
https://nitech.repo.nii.ac.jp/records/4171
https://nitech.repo.nii.ac.jp/records/4171a605449c-bbfe-4cf4-bf4f-a41c14f993df
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (341.6 kB)
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Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 72(6), pp.2531- 2533 ; 1992and may be found at http://link.aip.org/link/?jap/72/2531
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Ito, Akira
× Ito, Akira
× Ichimura, Masaya
× Usami, Akira
× Wada, Takao
× Kano, Hiroyuki
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| 著者別名 | ||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 72, 号 6, p. 2531-2533, 発行日 1992-09-15 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.351551 | |||||||||||||||
| 関連名称 | 10.1063/1.351551 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Micro-Raman spectroscopy is applied to evaluate change of the crystal quality in molecular beam epitaxial GaAs layers on Si after rapid thermal annealing (RTA). The forbidden transverse optical phonon is observed in the GaAs layers especially near the interface. In the as-grown state, the Raman frequency of the longitudinal optical phonon shifts toward higher frequency near the interface. This blue shift indicates the existence of the compressive stress due to the lattice mismatch between GaAs and Si. On the other hand, after the RTA, the Kaman peak shifts toward lower frequency. This red shift indicates that the tensile stress exists near the interface because of the difference in thermal expansion. The stress change indicates the relaxation of the lattice mismatch stress near the interface by formation of dislocations during the RTA. | |||||||||||||||
| 言語 | en | |||||||||||||||
