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Raman study of strain relaxation in Ge on Si
https://nitech.repo.nii.ac.jp/records/4347
https://nitech.repo.nii.ac.jp/records/4347f7dbf23a-4bca-4ade-bde3-5a322b28a619
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (678.8 kB)
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Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 77(10) ,pp.5144- 5148 ; 1995 and may be found at http://link.aip.org/link/?jap/77/5144
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Raman study of strain relaxation in Ge on Si | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Usami, Akira
× Wakahara, Akihiro
× Sasaki, Akio
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 77, 号 10, p. 5144-5148, 発行日 1995-05-15 |
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| 出版者 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| item_10001_relation_34 | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.359258 | |||||||||||||
| 関連名称 | 10.1063/1.359258 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | Strain in thin Ge layers grown by molecular beam epitaxy on (100) Si is measured by a Raman technique. When the average Ge thickness is 7 monoatomic layers (ML), Raman results show that the layer is almost coherent to the Si lattice. The strain begins to decrease at an average thickness of 10 ML, i.e., the critical thickness of dislocation generation is 10 ML. On the other hand, the relaxation begins at a thickness of 5 ML, according to reflection high‐energy electron diffraction observation during the growth. This initial stage relaxation is due to deformation of islands and not due to dislocation formation. Raman results for thicker layers show that with increasing layer thickness, the misfit strain decreases gradually but more rapidly than predicted by the theory of Matthews and Blakeslee . | |||||||||||||
| 言語 | en | |||||||||||||
