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Raman spectra of GaAs with ultrathin InAs layers inserted
https://nitech.repo.nii.ac.jp/records/4348
https://nitech.repo.nii.ac.jp/records/43481fa76639-dbe2-46d7-ab19-a871a0b7879a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (1.4 MB)
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(c)1995 The American Physical Society
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Raman spectra of GaAs with ultrathin InAs layers inserted | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Usami, Akira
× Tabuchi, Masao
× Sasaki, Akio
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| 著者別名 | ||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||
| 書誌情報 |
en : PHYSICAL REVIEW B 巻 51, 号 19, p. 13231-13237, 発行日 1995-05-15 |
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| 出版者 | ||||||||||||||
| 出版者 | American Physical Society | |||||||||||||
| 言語 | en | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0163-1829 | |||||||||||||
| item_10001_source_id_32 | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA00362255 | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| item_10001_relation_34 | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | http://dx.doi.org/10.1103/PhysRevB.51.13231 | |||||||||||||
| 関連名称 | 10.1103/PhysRevB.51.13231 | |||||||||||||
| 内容記述 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | Raman spectra of GaAs with ultrathin InAs layers inserted are measured and interpreted by comparing with spectra calculated based on the linear-chain model. The samples are grown by molecular-beam epitaxy, and the InAs layer thickness is varied from 2 ML (monolayers) to 10 ML. Both (001)-oriented and slightly misoriented substrates are used. From the transmission electron micrograph observation, it is found that the introduction of misfit dislocations is delayed on the misoriented substrate compared with the oriented substrate. When the InAs thickness is less than 6 ML, optical phonon modes in InAs are not observed. This is due to coupling of the InAs vibration to the vibration of the GaAs host lattice. At a thickness of 6 ML, the InAs longitudinal-optical mode begins to appear for the sample on the oriented substrate, but it is still unobservable for that on the misoriented substrate. Thus, the intensity of the InAs mode is stronger in a more heavily dislocated structure. This is because the InAs vibration is decoupled from the host GaAs vibration owing to dislocations at the heterointerfaces. | |||||||||||||
| 言語 | en | |||||||||||||
