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Personal use of this material is permitted. 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MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development
https://nitech.repo.nii.ac.jp/records/4661
https://nitech.repo.nii.ac.jp/records/4661cd34524e-ab1c-4972-9669-5d0852889f81
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (358.3 kB)
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(c)2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-07-24 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Niraula, Madan
× Niraula, Madan× Yasuda, Kazuhito× Namba, S.× Kondo, T.× Muramatsu, S.× Wajima, Y.× Yamashita, H.× Agata, Y. |
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著者別名 | ||||||
姓名 | ニラウラ, マダン | |||||
著者別名 | ||||||
姓名 | 安田, 和人 | |||||
書誌情報 |
IEEE Transactions on Nuclear Science 巻 60, 号 4, p. 2859-2863, 発行日 2013-08 |
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出版者 | ||||||
出版者 | Institute of Electrical and Electronics Engineers | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00189499 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00667999 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1109/TNS.2013.2263841 | |||||
関連名称 | 10.1109/TNS.2013.2263841 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |