WEKO3
アイテム
Co-implantation of Si+N into GaN for n-type doping
https://nitech.repo.nii.ac.jp/records/5091
https://nitech.repo.nii.ac.jp/records/50913217a461-1f0f-44cf-a785-a08c68422af5
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (229.9 kB)
|
Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 92(7), pp.3815- 3819 ; 2002 and may be found at http://link.aip.org/link/?jap/92/3815
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Co-implantation of Si+N into GaN for n-type doping | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Nakano, Yoshitaka
× Nakano, Yoshitaka
× Jimbo, Takashi
|
|||||||||
| 著者別名 | ||||||||||
| 姓名 | 神保, 孝志 | |||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 92, 号 7, p. 3815-3819, 発行日 2002-10-01 |
|||||||||
| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1504500 | |||||||||
| 関連名称 | 10.1063/1.1504500 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Si-doping characteristics have been systematically investigated for Si+N co-implanted GaN. n-type regions were produced in undoped GaN films by the co-implantation and subsequent annealing with an SiO2 encapsulation layer at high temperatures. The sheet carrier concentration is seen to be precisely controllable between 3×1012 and 5×1014 cm-2 with Si activation efficiencies of ?50% when the samples were annealed at 1300°C. From atomic force microscopic observations, the co-implanted sample shows smooth surface morphology identical to that before implantation, whereas Ga islands are found to be formed in the surface region by the activation annealing in the case of conventional Si implantation. Therefore, the Si+N co-implantation technique turns out to be an effective method to enhance electrical and structural properties in view of GaN stoichiometry. However, implantation-induced microdefects seem to remain even after the high-temperature annealing process for both Si- and Si+N-implanted GaN samples. | |||||||||
| 言語 | en | |||||||||
