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Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films
https://nitech.repo.nii.ac.jp/records/5102
https://nitech.repo.nii.ac.jp/records/51028837796e-e991-427f-bb4e-7013936d2ea3
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (91.5 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(21),pp.4023-4025 ; 2002 and may be found at http://link.aip.org/link/?apl/81/4023
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Yokota, Takeshi
× Yokota, Takeshi
× Fujimura, N.
× Ito, T.
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| 著者別名 | ||||||||||||
| 姓名 | 横田, 壮司 | |||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 81, 号 21, p. 4023-4025, 発行日 2002-11-18 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543431 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| item_10001_relation_34 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1524030 | |||||||||||
| 関連名称 | 10.1063/1.1524030 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | A magnetic semiconductor Si:Ce thin film was prepared using a vacuum evaporation system with electron-beam guns. The as-deposited thin film was amorphous and exhibited n-type conduction. It showed temperature dependence of resistivity (ρ-T), as in a normal semiconductor, and a diamagnetic property. By annealing at 973 K, however, the film epitaxially crystallizes and the conduction changes to the p-type. The resistivity of the film abruptly decreases by three orders of magnitude below 30 K, unlike that of the as-deposited film. The magnetic susceptibility measured at a low magnetic field (750 Oe) also decreases around the same temperature in ρ-T curves. These magnetic and carrier transport phenomena are responsible for the substitutionally dissolved Ce in Si. | |||||||||||
| 言語 | en | |||||||||||
