・名古屋工業大学学術機関リポジトリは、名古屋工業大学内で生産された学術情報を電子的に収集・保存・発信するシステムです。 ・論文の著作権は、著者または出版社が保持しています。著作権法で定める権利制限規定を超える利用については、著作権者に許諾を得てください。 ・著者版フラグに「author」と記載された論文は、著者原稿となります。実際の出版社版とは、レイアウト、字句校正レベルの異同がある場合もあります。 ・Nagoya Institute of Technology Repository Sytem is built to collect, archive and offer electronically the academic information produced by Nagoya Institute of Technology. ・The copyright and related rights of the article are held by authors or publishers. The copyright owners' consents must be required to use it over the curtailment of copyrights. ・Textversion "Author " means the article is author's version. Author version may have some difference in layouts and wordings form publisher version.
Electrical characterization of acceptor levels in Be-implanted GaN
利用統計を見る
File / Name
License
本文_fulltext
Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(21),pp.3990-3992; 2002 and may be found at http://link.aip.org/link/?apl/81/3990
We have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050°C with a SiO2 encapsulation layer. Capacitance-frequency measurements showed a typical dispersion effect characteristic of deep acceptors in fabricated Schottky diodes. Thermal admittance spectroscopy measurements revealed a discrete deep level located at ? 231meV above the valence band. This energy level is in reasonable agreement with the frequency dependence of the capacitance in view of the impurity transition frequency. Therefore, this energy level can most probably be assigned to a Be-related deep acceptor.
Electrical characterization of acceptor levels in Be-implanted GaN
本文_fulltext
(58.94KB)
