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Electrical characterization of acceptor levels in Be-implanted GaN
https://nitech.repo.nii.ac.jp/records/5103
https://nitech.repo.nii.ac.jp/records/51037c88d166-5a49-4669-8e71-beef224874ef
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (58.9 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(21),pp.3990-3992; 2002 and may be found at http://link.aip.org/link/?apl/81/3990
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Electrical characterization of acceptor levels in Be-implanted GaN | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Nakano, Yoshitaka
× Nakano, Yoshitaka
× Jimbo, Takashi
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| 著者別名 | ||||||||||
| 姓名 | 神保, 孝志 | |||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 81, 号 21, p. 3990-3992, 発行日 2002-11-18 |
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| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0003-6951 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00543432 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1523633 | |||||||||
| 関連名称 | 10.1063/1.1523633 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | We have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050°C with a SiO2 encapsulation layer. Capacitance-frequency measurements showed a typical dispersion effect characteristic of deep acceptors in fabricated Schottky diodes. Thermal admittance spectroscopy measurements revealed a discrete deep level located at ? 231meV above the valence band. This energy level is in reasonable agreement with the frequency dependence of the capacitance in view of the impurity transition frequency. Therefore, this energy level can most probably be assigned to a Be-related deep acceptor. | |||||||||
| 言語 | en | |||||||||
