WEKO3
アイテム
Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films
https://nitech.repo.nii.ac.jp/records/5132
https://nitech.repo.nii.ac.jp/records/5132282e2157-77c2-4550-b46f-4c15c13c2e1a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (133.2 kB)
|
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 93(7), pp.4045- 4048 ; 2003 and may be found at http://link.aip.org/link/?jap/93/4045
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Yokota, Takeshi
× Yokota, Takeshi
× Fujimura, N.
× Ito, T.
|
|||||||||||
| 著者別名 | ||||||||||||
| 姓名 | 横田, 壮司 | |||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 93, 号 7, p. 4045-4048, 発行日 2003-04-01 |
|||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00693547 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| item_10001_relation_34 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1559436 | |||||||||||
| 関連名称 | 10.1063/1.1559436 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Magnetic and magnetotransport properties of a magnetic semiconductor, Si:Ce films, were investigated. The as-deposited films exhibit n-type conduction due to their amorphous nature, with a temperature dependence of the resistivity (ρ-T) like a normal semiconductor with diamagnetic properties. By annealing at 973 K, the conduction and the magnetic susceptibility change to the p-type and become positive, respectively. The change in the magnetic susceptibility (χ-T) at a low magnetic field of 750 Oe against the measurement temperature exhibits spin-glasslike behavior showing a cusp around 38 K (Tg). The ρ-T curve increases exponentially from 273 K to 35 K, and then drastically decreases by three orders of magnitude below 33 K. Above Tg, the magnetoresistance behavior at a magnetic field below 0.5 T can be understood as that of a semiconductor caused by the Lorentz force. Below Tg, on the other hand, an extremely large magnetoresistance, which can not be explained by a Lorentz force alone, is observed. | |||||||||||
| 言語 | en | |||||||||||
