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Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 83(21),pp.4336-4338; 2003 and may be found at http://link.aip.org/link/?apl/83/4336
We report on the characteristics of SiO2/n-GaN metal-oxide-semiconductor (MOS) structures with β-Ga2O3 interlayers. β-Ga2O3 15 nm thick was grown by dry oxidation at 800°C for 6 h, and 100-nm-thick SiO2 was then deposited by sputtering. Capacitance-voltage measurements show a low interface trap density of ?3.9×1010eV-1cm-2, probably indicating an unpinning of the surface Fermi level. Additionally, current-voltage measurements display a low leakage current of ?1.2 μA/cm2 at a gate voltage of +20 V, regardless of rough oxide surface, as confirmed by atomic force microscopy observations. Thus, the stacked SiO2/β-Ga2O3 insulator is found to improve both the electrical interface properties and the gate dielectric characteristics of the GaN MOS structures.
Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers
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