・名古屋工業大学学術機関リポジトリは、名古屋工業大学内で生産された学術情報を電子的に収集・保存・発信するシステムです。 ・論文の著作権は、著者または出版社が保持しています。著作権法で定める権利制限規定を超える利用については、著作権者に許諾を得てください。 ・著者版フラグに「author」と記載された論文は、著者原稿となります。実際の出版社版とは、レイアウト、字句校正レベルの異同がある場合もあります。 ・Nagoya Institute of Technology Repository Sytem is built to collect, archive and offer electronically the academic information produced by Nagoya Institute of Technology. ・The copyright and related rights of the article are held by authors or publishers. The copyright owners' consents must be required to use it over the curtailment of copyrights. ・Textversion "Author " means the article is author's version. Author version may have some difference in layouts and wordings form publisher version.
Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers
利用統計を見る
File / Name
License
本文_fulltext
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 83(21),pp.4336-4338; 2003 and may be found at http://link.aip.org/link/?apl/83/4336
We report on the characteristics of SiO2/n-GaN metal-oxide-semiconductor (MOS) structures with β-Ga2O3 interlayers. β-Ga2O3 15 nm thick was grown by dry oxidation at 800°C for 6 h, and 100-nm-thick SiO2 was then deposited by sputtering. Capacitance-voltage measurements show a low interface trap density of ?3.9×1010eV-1cm-2, probably indicating an unpinning of the surface Fermi level. Additionally, current-voltage measurements display a low leakage current of ?1.2 μA/cm2 at a gate voltage of +20 V, regardless of rough oxide surface, as confirmed by atomic force microscopy observations. Thus, the stacked SiO2/β-Ga2O3 insulator is found to improve both the electrical interface properties and the gate dielectric characteristics of the GaN MOS structures.