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Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
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Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 84(4),pp.613-615; 2004 and may be found at http://link.aip.org/link/?apl/84/613
Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) using SiO2, Si3N4, and silicon oxynitride (SiON) formed by plasma enhanced chemical vapor deposition. An increase of IDmax and gmmax has been observed on the passivated (SiO2, Si3N4 and SiON) HEMTs when compared with the unpassivated HEMTs. About an order of magnitude low IgLeak and three orders of magnitude high IgLeak was observed on Si3N4 and SiO2 passivated HEMTs, respectively, when compared with the unpassivated HEMTs. The increase of IgLeak is due to the occurrence of surface related traps, which was confirmed by the observation of kink and hysteresis effect on dc and ac IDS-VDS characteristics, respectively. Though the Si3N4 passivated HEMTs show better dc characteristics, the breakdown voltage (BVgd) characteristics are not comparable with SiO2, SiON passivated and unpassivated HEMTs. The SiON is also a very promising candidate as a surface passivant for AlGaN/GaN HEMTs because it shows better BVgd with low hysteresis width and small ID collapse than Si3N4 passivated HEMTs.
Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
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